Pioneering new frontier of ultra-wide band gap semiconductors 

Beyond Gallium Nitride

Following gallium nitride (GaN)—the breakthrough material behind innovations like blue LEDs and transistors for compact AC adapters—aluminum nitride (AlN), an ultra-wide band gap semiconductor, is emerging as the next-generation material capturing global attention.

At the forefront of ultra-wide band gap semiconductor innovation, we specialize in AlN-based device technologies, a field where we have developed strong expertise. AlN offers exceptional potential for deep-UV optoelectronics and next-generation power devices.

Leveraging our expertise in AlN, we are developing groundbreaking devices that will shape the future of technology.

Our Technology

From Opto-electrics to Power devices

Our expertise spans the full spectrum of AlN-based ultra-wide band gap semiconductor technology—ranging from AlN, AlGaN, and GaN thin-film growth to device design and fabrication—enabling the realization of truly innovative semiconductor devices.

Deep-UV Laser Diodes

  • Realized the world’s first Deep-UV laser diodes.
  • Output power over 1 mW at 275 nm, packaged in TO5.6 CAN.
  • Offering engineering samples.
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Laser Diodes Jumps to Deep-UV

Since the birth of the blue laser diode, researchers around the world have been racing to push the boundaries toward even shorter wavelengths. After Hamamatsu Photonics reported a pulsed emission at 326  nm around the year 2008, no further breakthroughs in ultraviolet laser diodes were made for decades—casting doubt on whether deep ultraviolet (especially below 300 nm) laser diodes were even possible.

A breakthrough came in 2019, when Asahi Kasei Corporation and the Amano Laboratory of Nagoya University achieved the world’s first pulsed emission in the deep ultraviolet at room temperature. That breakthrough was followed in 2022 by the world’s first continuous-wave operation at room temperature—marking the realization of the first practical deep-UV laser diode in nearly 20 years.

Curving out from Asahi Kasei in 2025, ULTEC aims to bring deep-UV laser diode technology to life through real-world implementation.

Crystal growth, Device design and Prototyping

  • Decades of experience in AlGaN film growth, device design and fabrication using single-crystal AlN substrates.
  • Leading in advanced research field of AlGaN-based transistors and UV detectors.
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Where Innovation Ignites the Future — The Essence of Laser Diode Technology

To realize a laser diode, several critical key requirements are essential: high-quality single-crystal substrates that form the foundation of the device; advanced thin-film growth techniques to build active layers; stable and reliable process technologies for fabrication; and precise design and evaluation technologies to control and optimize performance. Missing even one of these technologies makes device realization extremely challenging, highlighting the technical difficulty of laser diode development.

Our team brings together world-class engineers, each specializing in critical technological domains. By leveraging the cutting-edge facilities of C-TEFs (Center for Technology and Engineering for Future Semiconductors) at Nagoya University, we are accelerating the　development of next-generation laser diodes and expanding research collaboration in the fields of optoelectronic and power devices.

Team

A highly specialized team setting sail toward a new horizon in ultra-wide bandgap semiconductors
Akira YOSHIKAWA, Ph.D.

Akira Yoshikawa completed his master’s degree at the Graduate School of Engineering, Nagoya University, before joining Asahi Kasei Corporation. Over the years, he contributed to various R&D projects in compound semiconductors and was seconded to prestigious institutions such as AIST, Meijo University, and Nagoya University. In 2018, he received his Ph.D. as a working professional from Meijo University (Akasaki Lab). With a specialization in thin-film crystal growth of nitride semiconductors particularly using MOVPE, Dr. Yoshikawa has achieved several world-leading breakthroughs in the field. In 2021, he joined a deep-UV laser diode project, successfully led its commercialization, and founded ULTEC Inc. as a curving-out start up from Asahi Kasei.

CEO, Co-founder
Ziyi ZHANG, Ph.D.

Ziyi Zhang completed his master’s degree at the Graduate School of Engineering, the University of Tokyo, before joining Asahi Kasei Corporation. After his work in deep-UV LED development, he initiated the deep-UV laser diode project at Nagoya University. In 2019, he achieved the world’s first pulsed operation, followed by continuous-wave operation of deep-UV laser diode in 2022. He received his Ph.D. degree from the Graduate School of Engineering of Nagoya University for this achievement. Specializing in opto-electrical device design and characterization, Dr. Zhang has received numerous accolades, including two Outstanding Paper Awards from the Japan Society of Applied Physics.

CTO, Co-founder
Maki KUSHIMOTO, Ph.D.

Associate Professor of Graduate School of Engineering, Nagoya University

Faculty profile
Technical advisor
Hiroshi AMANO, Ph.D.

Professor of Graduate School of Engineering, Nagoya University

Faculty profile
Technical advisor

Contact

    ULTEC Inc.

    TOIC NAGOYA, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-0814, Japan