About us
Beyond Gallium Nitride
Following the evolution of next-generation electronics driven by gallium nitride,
the ultra-wide-bandgap semiconductor aluminum nitride is poised to unlock new possibilities beyond.
Leveraging aluminum nitride–based materials, ULTEC Corporation is a global leader with world-class expertise in
deep-ultraviolet laser diodes, far-ultraviolet LEDs, deep-ultraviolet sensors, and high-voltage power devices.
We strive to unleash the full potential of ultra-wide-bandgap semiconductor technology
and bring transformative innovations to society.
Our Technology
Our expertise spans the full spectrum of AlN-based ultra-wide band gap semiconductor technology—ranging from AlN, AlGaN, and GaN thin-film growth to device design and fabrication—enabling the realization of truly innovative semiconductor devices.
Deep Ultraviolet Laser Diode
Since the birth of the blue laser diode, researchers around the world have been racing to push the boundaries toward even shorter wavelengths.
After Hamamatsu Photonics reported a pulsed emission at 326 nm around the year 2008, no further breakthroughs in ultraviolet laser diodes were made for decades—casting doubt on whether deep ultraviolet (especially with wavelengths below 300 nm) laser diodes were even possible.
A breakthrough came in 2019, when Asahi Kasei Corporation and the Amano Laboratory of Nagoya University achieved the world’s first pulsed emission in the deep ultraviolet at room temperature. That breakthrough was followed in 2022 by the world’s first continuous-wave operation at room temperature—marking the realization of the first practical deep UV laser diode in nearly 20 years.
Curving out from Asahi Kasei in 2025, ULTEC aims to bring deep UV laser diode technology to life through real-world implementation.
Crystal growth, Device design and Prototyping
To realize a laser diode, several critical key requirements are essential: high-quality single-crystal substrates that form the foundation of the device; advanced thin-film growth techniques to build active layers; stable and reliable process technologies for fabrication; and precise design and evaluation technologies to control and optimize performance. Missing even one of these technologies makes device realization extremely challenging, highlighting the technical difficulty of laser diode development.
Our team brings together world-class engineers, each specializing in critical technological domains. By leveraging the cutting-edge facilities of C-TEFs (Center for Technology and Engineering for Future Semiconductors) at Nagoya University, we are accelerating the development of next-generation laser diodes and expanding research collaboration in the fields of optoelectronic and power devices.
Team Members
Akira YOSHIKAWA
Ph.D.
CEO
Akira Yoshikawa completed his master’s degree at the Graduate School of Engineering, Nagoya University, before joining Asahi Kasei Corporation. Over the years, he contributed to various R&D projects in compound semiconductors and was seconded to prestigious institutions such as AIST, Meijo University, and Nagoya University. In 2018, he received his Ph.D. as a working professional from Meijo University (Akasaki Lab). With a specialization in thin-film crystal growth of nitride semiconductors particularly using MOVPE, Dr. Yoshikawa has achieved several world-leading breakthroughs in the field. In 2021, he joined a deep-UV laser diode project, successfully led its commercialization, and founded ULTEC Inc. as a curving-out start up from Asahi Kasei.
Ziyi ZHANG
Ph.D.
CTO
Ziyi Zhang completed his master’s degree at the Graduate School of Engineering, the University of Tokyo, before joining Asahi Kasei Corporation. After his work in deep-UV LED development, he initiated the deep-UV laser diode project at Nagoya University. In 2019, he achieved the world’s first pulsed operation, followed by continuous-wave operation of deep-UV laser diode in 2022. He received his Ph.D. degree from the Graduate School of Engineering of Nagoya University for this achievement. Specializing in opto-electrical device design and characterization, Dr. Zhang has received numerous accolades, including two Outstanding Paper Awards from the Japan Society of Applied Physics.
Maki KUSHIMOTO
Ph.D.
Technical Advisor
Associate Professor of Graduate School of Engineering, Nagoya University
- Recipient of the 2022 MEXT Minister’s Commendation for Science and Technology (Young Scientists Award)
- Recipient of the 2022 Harold M. Manasevit Young Investigator Award
Hiroshi AMANO
Ph.D.
Technical Advisor
Professor of Graduate School of Engineering, Nagoya University
- Recipient of the 2014 Nobel Prize in Physics
- Recipient of the Order of Culture (2014)
Company profile
| Company Name | ULTEC Inc. |
| Founded in | April 1, 2025 |
| President | Akira YOSHIKAWA |
| Capital | ¥ 3,000,000 |
| Business | Manufacturing and sales of nitride semiconductor devices R&D consulting |
| Office | TOIC NAGOYA, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-0814, Japan |
ULTEC Inc.
TOIC NAGOYA, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-0814, Japan